Infineon IQE006NE2LM5CG: High-Performance 30 V OptiMOS 5 Power MOSFET in SuperSO8 Package

The relentless pursuit of higher efficiency and power density in modern electronics, from server power supplies to battery management systems, demands power semiconductors that deliver exceptional performance in minimal space. Addressing this challenge head-on, the Infineon IQE006NE2LM5CG stands out as a benchmark 30 V N-channel power MOSFET that encapsulates the advanced OptiMOS™ 5 technology within the compact and thermally efficient SuperSO8 (LFPAK) package.

This device is engineered for applications where every milliohm and every square millimeter counts. Its cornerstone feature is an ultra-low maximum on-state resistance (R DS(on)) of just 0.6 mΩ at 10 V. This exceptionally low resistance is the primary factor in minimizing conduction losses, which directly translates to higher system efficiency, reduced heat generation, and the potential for cooler operation. This makes it an ideal choice for high-current switching in scenarios like synchronous rectification in DC/DC converters and load switch circuits.

Beyond its impressive R DS(on), the MOSFET boasts a low gate charge (Q G) and outstanding switching characteristics. These traits are critical for achieving high-frequency operation, which allows designers to shrink the size of associated passive components like inductors and capacitors. The result is a significant boost in overall power density, enabling more compact and lighter end products without compromising performance.

The choice of package is equally strategic. The SuperSO8 package offers a superior thermal performance compared to a standard SO-8, with a very low thermal resistance. Its gull-wing leads provide robust mechanical reliability and facilitate automated optical inspection (AOI) after board assembly, a key advantage for manufacturing. Furthermore, its footprint is compatible with the standard SO-8, allowing for a straightforward performance upgrade in existing designs.

In summary, the IQE006NE2LM5CG is a powerhouse component that combines the leading-edge silicon performance of OptiMOS 5 technology with the mechanical and thermal advantages of the SuperSO8 package.

ICGOODFIND: The Infineon IQE006NE2LM5CG is a top-tier solution for designers optimizing for maximum efficiency and power density. Its industry-leading 0.6 mΩ R DS(on) in a compact, thermally enhanced package makes it a superior choice for demanding power management tasks in computing, telecom, and automotive systems.

Keywords: OptiMOS 5, Low R DS(on), SuperSO8 Package, Power Density, Synchronous Rectification.