Infineon IAUT165N08S5N029: High-Performance Automotive MOSFET for Advanced Power Management

The relentless drive towards vehicle electrification, advanced driver-assistance systems (ADAS), and sophisticated in-cabin experiences demands a new generation of power semiconductors. At the heart of this transformation is the need for efficient, robust, and reliable power management. The Infineon IAUT165N08S5N029 stands out as a premier automotive-grade MOSFET engineered specifically to meet these stringent challenges.

This component is an N-channel OptiMOS™ 5 power MOSFET built on Infineon’s advanced trench technology. With a voltage rating of 80 V and a continuous drain current (I_D) of 165 A at 100°C, it is designed to handle high-power loads with exceptional efficiency. Its standout feature is an ultra-low typical on-state resistance (R_DS(on)) of just 1.65 mΩ, which is a critical factor in minimizing conduction losses. This low resistance translates directly into higher efficiency, reduced heat generation, and improved overall system performance, making it ideal for demanding automotive environments.

Robustness and reliability are paramount for any component operating in a vehicle. The IAUT165N08S5N029 is fully AEC-Q101 qualified, ensuring it meets the rigorous quality and durability standards required for automotive applications. It is designed to withstand the harsh conditions under the hood, including extreme temperature fluctuations, high humidity, and intense vibration. Furthermore, its high avalanche ruggedness and exceptional switching performance make it exceptionally durable against voltage spikes and stressful load conditions, common in automotive electrical systems.

Key target applications for this MOSFET include:

DC-DC Converters: Critical for 48V/12V mild-hybrid systems and voltage regulation modules.

Motor Control Systems: Driving high-current loads in electric power steering (EPS), braking systems, and thermal management fans.

Load Switches: Managing high-power distribution for infotainment, ADAS sensors, and lighting systems.

ICGOODFIND: The Infineon IAUT165N08S5N029 is a top-tier automotive MOSFET that sets a high bar for power management solutions. Its combination of ultra-low R_DS(on), high current capability, and proven automotive-grade reliability makes it an indispensable component for next-generation vehicle architectures, enabling more efficient, powerful, and smarter electronic systems.

Keywords:

1. Automotive-Grade

2. Ultra-Low R_DS(on)

3. High Current Capability

4. AEC-Q101 Qualified

5. Power Management