Infineon IPA60R280E6 600V CoolMOS™ Power Transistor for High-Efficiency Switching Applications

The continuous evolution of power electronics demands components that deliver higher efficiency, greater power density, and improved thermal performance. Addressing these needs, the Infineon IPA60R280E6 stands out as a premier 600V superjunction MOSFET based on Infineon’s advanced CoolMOS™ E6 technology. This power transistor is engineered specifically for high-efficiency and high-frequency switching applications, setting a new benchmark in performance and reliability.

A key highlight of the IPA60R280E6 is its exceptionally low on-state resistance (RDS(on)) of just 280 mΩ. This low resistance minimizes conduction losses, which is critical for improving overall system efficiency, especially in high-power applications. When combined with its superior switching performance, the device significantly reduces both switching and conduction losses, leading to cooler operation and higher energy efficiency.

The transistor is built using Infineon’s state-of-the-art superjunction (SJ) technology, which allows for outstanding performance in hard-switching and soft-switching topologies. This makes it an ideal choice for a wide array of applications, including switched-mode power supplies (SMPS), photovoltaic inverters, motor drives, industrial power supplies, and charging infrastructure. The robust 600V voltage rating ensures sufficient headroom for off-line power systems operating from universal input voltages, enhancing system durability and safety.

Furthermore, the IPA60R280E6 features low gate charge (Qg) and low effective output capacitance (Coss(eff)), which are essential for achieving high switching speeds and reducing drive losses. These characteristics allow power supply designers to push switching frequencies higher, enabling the use of smaller passive components such as inductors and transformers. Consequently, this leads to more compact, lighter, and cost-effective power solutions without compromising performance.

Thermal management is another area where this device excels. The low thermal resistance of the package ensures efficient heat dissipation, contributing to the reliability and longevity of the end product. Infineon’s commitment to quality is evident in the device’s high ruggedness and ability to withstand extreme operational conditions, making it suitable for demanding industrial environments.

ICGOOODFIND: The Infineon IPA60R280E6 CoolMOS™ E6 represents a significant advancement in power transistor technology, offering an optimal blend of low losses, high switching speed, and thermal efficiency. It is a cornerstone component for designers aiming to achieve new levels of performance in modern power conversion systems.

Keywords:

CoolMOS™ E6

Low RDS(on)

High-Efficiency Switching

Superjunction MOSFET

Hard-Switching Applications