Infineon IRFR5505TRLPBF N-Channel MOSFET: Datasheet, Application Circuit, and Pinout Configuration

The Infineon IRFR5505TRLPBF is a popular N-Channel power MOSFET designed using advanced silicon technology to deliver high efficiency and reliability in a wide range of switching applications. This surface-mount device, housed in a compact DPAK (TO-252) package, is engineered for low on-state resistance and fast switching speeds, making it an excellent choice for power management circuits, DC-DC converters, motor control, and other high-current switching systems.

Key Datasheet Specifications

A thorough review of the datasheet reveals the critical parameters that define this MOSFET's performance. The device boasts a drain-source voltage (V_DS) of 55V, allowing it to handle a significant voltage range. Its continuous drain current (I_D) is 31A at a case temperature of 25°C, demonstrating its capability to manage high power levels. A major factor in its efficiency is its exceptionally low on-state resistance (R_DS(on)) of just 22 mΩ at a gate-source voltage of 10V. This low R_DS(on) minimizes conduction losses, leading to cooler operation and higher overall system efficiency. Furthermore, it features a low threshold voltage (V_GS(th)) typically between 2V and 4V, ensuring compatibility with both logic-level and standard drive circuits.

Pinout Configuration

The IRFR5505TRLPBF comes in a standard three-pin DPAK package. The pinout is consistent with similar devices:

Pin 1 (Gate): This is the control pin. Applying a voltage exceeding the threshold voltage between the Gate and Source turns the MOSFET on.

Pin 2 (Drain): The main load current flows into the MOSFET through this pin. It is connected to the large tab of the package.

Pin 3 (Source): The main load current flows out of the MOSFET through this pin, completing the circuit.

Application Circuit Example: A Simple Switch

One of the most fundamental applications of the IRFR5505TRLPBF is as a low-side switch to control a high-current load, such as a DC motor or a bank of LEDs. A typical circuit configuration involves:

1. Load Connection: The load (e.g., a motor) is connected between the positive supply voltage (V_DD) and the Drain pin of the MOSFET.

2. Source Connection: The Source pin is connected directly to ground.

3. Gate Driving: The Gate pin is connected to a control signal (e.g., from a microcontroller PWM output) through a gate resistor (typically between 10Ω and 100Ω). This resistor is crucial for dampening oscillations and controlling the rise time of the gate voltage, which in turn manages the switching speed and reduces electromagnetic interference (EMI).

4. Protection Diode: An external flyback diode is placed in reverse bias across the inductive load (like a motor) to protect the MOSFET from voltage spikes generated when the current through the inductor is suddenly interrupted.

When the control signal applies a sufficient voltage (e.g., 5V or 10V) to the Gate, the MOSFET turns on, allowing current to flow from Drain to Source, thereby powering the load. When the Gate signal is pulled to 0V, the MOSFET turns off, cutting power to the load.

ICGOODFIND Summary

The Infineon IRFR5505TRLPBF is a highly efficient and robust N-Channel MOSFET, characterized by its high current handling (31A), low on-state resistance (22 mΩ), and 55V voltage rating. Its compact DPAK package and strong performance make it an ideal component for a multitude of power switching applications, including motor drivers, power supplies, and load switches, where minimizing power loss and maximizing thermal performance are critical.

Keywords: Power MOSFET, Low RDS(on), Switching Applications, DC-DC Converter, Motor Control